Atmospheric and light-induced effects in nanostructured silicon deposited by capacitively and inductively-coupled plasma

Authors

  • Zaki Mohammad Saleh Arab American University-Jenin
  • Gizem Nogay Middle East Technical University
  • Engin Ozkol Middle East Technical University
  • Rasit Turan Middle East Technical University

DOI:

https://doi.org/10.18201/ijisae.13913

Keywords:

Photoconductivity, amorphous, nanostructure, atmospheric aging, electron spin resonance.

Abstract

Renewable sources of energy have demonstrated the potential to replace much of the conventional sources but the cost continues to pose a challenge. Efforts to reduce cost involve highly efficient and less expensive materials as well as enhanced light management. Nanostructured materials consisting of silicon quantum dots in a matrix of amorphous silicon (a-Si) are promising for higher efficiency and better stability. Quantum confinement offers a tunable band gap, relaxes momentum conservation rule, and may permit multi exciton generation, MEG. We employ electron spin resonance (ESR), the temperature dependence of dark and photoconductivity to compare the stability of amorphous and nanostructured silicon films deposited by inductively- and capacitively-coupled plasma against atmospheric and light exposure. Distinctly different behaviors are observed for amorphous and nanostructured films suggesting that nanostructured films are more permeable to oxygen infusion but more resistant to light induced effect

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Author Biographies

Zaki Mohammad Saleh, Arab American University-Jenin

Associate Professor

Physics Department

Gizem Nogay, Middle East Technical University

Physics Department

Engin Ozkol, Middle East Technical University

Department of Chemical Engineering

Rasit Turan, Middle East Technical University

Professor of Physics

Deaprtment of Physics

Director of GUNAM

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Published

01.04.2015

How to Cite

Saleh, Z. M., Nogay, G., Ozkol, E., & Turan, R. (2015). Atmospheric and light-induced effects in nanostructured silicon deposited by capacitively and inductively-coupled plasma. International Journal of Intelligent Systems and Applications in Engineering, 3(2), 67–71. https://doi.org/10.18201/ijisae.13913

Issue

Section

Research Article